Product Summary
The BAS21LT1G is a Switching Diode.
Parametrics
BAS21LT1G absolute maximum ratings: (1)Continuous Reverse Voltage VR: 120 Vdc; (2)Peak Forward Current IF: 200 mAdc; (3)Peak Forward Surge Current IFM(surge): 625 mAdc; (4)Junction and Storage Temperature Range, TJ, Tstg: -55 to +150℃; (5)Power Dissipation (Note 1) PD: 385 mW.
Features
BAS21LT1G features: (1)These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant; (2)S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable.
Diagrams
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![]() ON Semiconductor |
![]() Diodes (General Purpose, Power, Switching) 250V 200mA |
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![]() BAS20 |
![]() Taiwan Semiconductor |
![]() Diodes (General Purpose, Power, Switching) Switching diode 250 mW |
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![]() BAS20 /T3 |
![]() NXP Semiconductors |
![]() Diodes (General Purpose, Power, Switching) DIODE SW TAPE-11 |
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![]() Negotiable |
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![]() BAS20 T/R |
![]() NXP Semiconductors |
![]() Diodes (General Purpose, Power, Switching) DIODE SW TAPE-7 |
![]() Data Sheet |
![]() Negotiable |
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![]() BAS20,215 |
![]() NXP Semiconductors |
![]() Diodes (General Purpose, Power, Switching) DIODE SW TAPE-7 |
![]() Data Sheet |
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![]() BAS20,235 |
![]() NXP Semiconductors |
![]() Diodes (General Purpose, Power, Switching) DIODE SW TAPE-11 |
![]() Data Sheet |
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![]() BAS20_Q |
![]() Fairchild Semiconductor |
![]() Rectifiers 200V 200mA |
![]() Data Sheet |
![]() Negotiable |
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