(China (Mainland))
Product Summary
The IS42S16400F-6TL is a 64Mb Synchronous DRAM. It is organized as 1,048,576bits x 16-bit x 4-bank for improved performance. The IS42S16400F-6TL achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The IS42S16400F-6TL includes an AUTO REFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible.
Parametrics
IS42S16400F-6TL absolute maximum ratings: (1)Maximum Supply Voltage:–1.0 to +4.6V; (2)Maximum Supply Voltage for Output Buffer:–1.0 to +4.6V; (3)Input Voltage:–1.0 to Vddq + 0.5V; (4)Output Voltage:–1.0 to Vddq + 0.5V; (5)Allowable Power Dissipation:1W; (6)output Shorted Current:50mA; (7)storage temperature:-65 to +150℃.
Features
IS42S16400F-6TL features: (1)Clock frequency: 200, 166, 143, 133 MHz; (2)Fully synchronous; all signals referenced to a positive clock edge; (3)Internal bank for hiding row access/precharge; (4)Single 3.3V power supply; (5)LVTTL interface; (6)Programmable burst length(1, 2, 4, 8, full page); (7)Programmable burst sequence: Sequential/Interleave; (8)Self refresh modes; (9)Auto refresh (CBR); (10)4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 16ms (A2 grade); (11)Random column address every clock cycle; (12)Programmable CAS latency (2, 3 clocks); (13)Burst read/write and burst read/single write operations capability; (14)Burst termination by burst stop and precharge command.
Diagrams
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 IS42S16400F-6TL |
ISSI |
DRAM 64M (4Mx16) 166MHz SDRAM, 3.3v |
Data Sheet |
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IS42S16400F-6TLI |
ISSI |
DRAM 64M (4Mx16) 166MHz SDRAM, 3.3v |
Data Sheet |
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IS42S16400F-6TL-TR |
ISSI |
DRAM 64M (4Mx16) 166MHz SDRAM, 3.3v |
Data Sheet |
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IS42S16400F-6TLI-TR |
ISSI |
DRAM 64M (4Mx16) 166MHz SDRAM, 3.3v |
Data Sheet |
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