Product Summary

The AT28C010-12DM/883 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology. The AT28C010-12DM/883 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing of up to 128-bytes simultaneously. During a write cycle, the address and 1 to 128-bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the AT28C010-12DM/883 will automatically write the latched data using an internal control timer.

Parametrics

AT28C010-12DM/883 absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)All Input Voltages (including NC Pins) with Respect to Ground:. -0.6V to +6.25V; (4)All Output Voltages with Respect to Ground: -0.6V to VCC + 0.6V; (5)Voltage on OE and A9 with Respect to Ground: -0.6V to +13.5V.

Features

AT28C010-12DM/883 features:(1)Fast Read Access Time - 120 ns; (2)Automatic Page Write Operation; (3)Fast Write Cycle Time; (4)Low Power Dissipation; (5)Hardware and Software Data Protection; (6)DATA Polling for End of Write Detection; (7)High Reliability CMOS Technology; (8)Single 5V ± 10% Supply; (9)CMOS and TTL Compatible Inputs and Outputs; (10)JEDEC Approved Byte-Wide Pinout.

Diagrams

AT28C010-12DM/883 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
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AT28C010-12DM/883
AT28C010-12DM/883

Atmel

EEPROM 1M 5V SDP - 120NS MILTEM 883C

Data Sheet

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AT28BV16
AT28BV16

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