STB9NK60ZT4

STB9NK60ZT4, Zener-Protected SuperMESH Power MOSFET, 600V, 0.85ohm, 7A, TO-263

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Price:: US $1.00~100.00 / piece [Get Latest Price]

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PartNumber:: STB9NK60ZT4

Brand:: STMicroelectronics - ST | Pack: TO | D/C: 11+

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Products Upload time: 2012-05-31

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Part Number:STB9NK60ZT4
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Product Summary

The STB9NK60ZT4 is a Zener-Protected SuperMESH Power MOSFET, which is obtained through an extreme optimization of ST well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The STB9NK60ZT4 is ideal for: (1)high current, high speed switching; (2)off-line power supplies, adaptors and PFC.

Parametrics

STB9NK60ZT4 absolute maximum ratings:(1)VDS, Drain-source Voltage (VGS = 0): 600 V; (2)VDGR, Drain-gate Voltage (RGS = 20 kW): 600 V; (3)VGS, Gate- source Voltage: ± 30 V; (4)ID, Drain Current (continuous) at TC = 25℃: 7A ; (5)ID, Drain Current (continuous) at TC = 100℃: 4.4A; (6)IDM, (l) Drain Current (pulsed): 28A ; (7)PTOT, Total Dissipation at TC = 25℃: 125A; (8)VESD(G-S), Gate source ESD(HBM-C=100pF, R=1.5KΩ): 4000 V; (9)dv/dt, Peak Diode Recovery voltage slope 4.5 V/ns; (10)Tj, Operating Junction Temperature: -55 to 150℃; (11)Tstg, Storage Temperature: -55 to 150℃.

Features

STB9NK60ZT4 features: (1)typical RDS(on) = 0.85 Ω; (2)extremely high dv/dt capability; (3)improved ESD capability; (4)100% avalanche rated; (5)gate charge minimized; (6)very low intrinsic capacitances; (7)very good manufacturing repeatibility.